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Low-threshold-current 1.2–1.5 μm laser diodes based on AlInGaAs/InP heterostructures

✍ Scribed by S. O. Slipchenko; A. V. Lyutetskii; N. A. Pikhtin; N. V. Fetisova; A. Yu. Leshko; Yu. A. Ryaboshtan; E. G. Golikova; I. S. Tarasov

Book ID: 110133812
Publisher: SP MAIK Nauka/Interperiodica
Year: 2003
Tongue: English
Weight: 53 KB
Volume: 29
Category: Article
ISSN: 1063-7850
DOI: 10.1134/1.1558742

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We report on round quantum dots grown on InP (100) substrate, which emit around 1.55 mm. At 10 K the full width at half maximum is as small as 28 meV, attesting a rather uniform size distribution. The carrier lifetimes are almost the same across the whole photoluminescence band, indicating the good