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High-power low-threshold laser diodes (λ=0.94μm) based on MBE-grown In0.1Ga0.9As/AlGaAs/GaAs heterostructures

✍ Scribed by S. B. Aleksandrov; A. N. Alekseev; D. M. Demidov; A. L. Dudin; N. I. Katsavets; I. V. Kogan; Yu. V. Pogorel’skii; A. L. Ter-Martirosyan; É. G. Sokolov; V. P. Chaly; A. P. Shkurko


Book ID
110132235
Publisher
SP MAIK Nauka/Interperiodica
Year
2002
Tongue
English
Weight
52 KB
Volume
28
Category
Article
ISSN
1063-7850

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