High power single-mode (λ=1.3–1.6 μm) laser diodes based on quantum well InGaAsP/InP heterostructures

✍ Scribed by A. Yu. Leshko; A. V. Lyutetskii; N. A. Pikhtin; S. O. Slipchenko; Z. N. Sokolova; N. V. Fetisova; E. G. Golikova; Yu. A. Ryaboshtan; I. S. Tarasov

• Book ID: 110132865
• Publisher: Springer
• Year: 2002
• Tongue: English
• Weight: 91 KB
• Volume: 36
• Category: Article
• ISSN: 1063-7826
• DOI: 10.1134/1.1521236