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'On-wafer' surface implanted high power, picosecond pulse InGaAsP/InP (λ = 1.53–1.55 μm) laser diodes

✍ Scribed by A. Paraskevopoulos; H.-J. Hensel; S. Schelhase; J. Frahm; J. Kübler; A. Denker; A. Gubenko; E.L. Portnoi


Book ID
110362480
Publisher
Springer
Year
2001
Tongue
English
Weight
440 KB
Volume
33
Category
Article
ISSN
0306-8919

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