1.7–1.8 µm Diode lasers based on quantum-well InGaAsP/InP heterostructures

✍ Scribed by A. V. Lyutetskii; N. A. Pikhtin; S. O. Slipchenko; Z. N. Sokolova; N. V. Fetisova; A. Yu. Leshko; V. V. Shamakhov; A. Yu. Andreev; E. G. Golikova; Yu. A. Ryaboshtan; I. S. Tarasov

• Book ID: 110137079
• Publisher: Springer
• Year: 2003
• Tongue: English
• Weight: 99 KB
• Volume: 37
• Category: Article
• ISSN: 1063-7826
• DOI: 10.1134/1.1626224