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Analysis of facet reflectivity, mirror loss, single-transverse mode condition and beam divergence angle at 1.3 μm and 1.55 μm wavelength of InGaAsP/InP buried heterostructure semiconductor laser diodes

✍ Scribed by H. Ghafouri-Shiraz


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
695 KB
Volume
22
Category
Article
ISSN
0030-3992

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