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Dependence of Threshold Current on QW Position and on Pressure in 1.5 μm InGaAs(P) Lasers

✍ Scribed by S. J. Sweeney; A. R. Adams; M. Silver; E. P. O'Reilly; J. R. Watling; A. B. Walker; P. J. A. Thijs

Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
208 KB
Volume
211
Category
Article
ISSN
0370-1972

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The Hydrostatic Pressure Dependence of the Threshold Current in 1.3 μm InGaAsP Quantum Well Semiconductor Diode Lasers
✍ A. F. Phillips; S. J. Sweeney; A. R. Adams; P. J. A. Thijs 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 191 KB 👁 1 views

We have measured the change in threshold current and lasing photon energy as a function of pressure in 1.3 mm semiconductor quantum well lasers. We observe a decrease in threshold current with increasing pressure indicative of an Auger recombination process which decreases as the band gap increases.