๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Low-temperature formation of gate-sio2 films for poly-si tfts by o2-ar sputtering

โœ Scribed by Shiro Suyama; Akio Okamoto; Seiiti Shirai; Tadashi Serikawa


Book ID
112078815
Publisher
John Wiley and Sons
Year
1993
Tongue
English
Weight
622 KB
Volume
76
Category
Article
ISSN
8756-663X

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Stacked gate insulator of photooxide and
โœ Yukihiko Nakata; Tetsuya Okamoto; Takashi Itoga; Toshimasa Hamada; Yutaka Ishii ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 1019 KB

A stacked gate insulator consisting of photooxide and PECVD film prepared from SiH 4 and N 2 O for use in low-temperature poly-Si thin-film transistors has been developed. The rate of photooxidation using a Xe excimer lamp is the same for (100) and (111) single-crystal Si wafers, and SiO 2 with good