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Low temperature formation of SiO2 thin films by nitric acid oxidation of Si (NAOS) and application to thin film transistor (TFT)

✍ Scribed by T. Matsumoto; Asuha; W.-B. Kim; M. Yamada; S. Imai; S. Terakawa; H. Kobayashi


Book ID
104052333
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
213 KB
Volume
86
Category
Article
ISSN
0167-9317

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