Low resistance Mo/Al/Mo/Au ohmic contact scheme to InAlN/AlN/GaN heterostructure

✍ Scribed by Lee, Jaesun ;Yan, Minjun ;Ofuonye, Benedict ;Jang, Jaehyung ;Gao, X. ;Guo, Shiping ;Adesida, Ilesanmi

• Book ID: 105366068
• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 167 KB
• Volume: 208
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201001096

✦ Synopsis

Abstract

Mo/Al/Mo/Au metallization scheme was investigated to develop low‐resistance ohmic contacts on InAlN/AlN/GaN field‐effect transistor heterostructure using a pre‐metallization surface treatment with SiCl~4~ plasma in a reactive ion etching system and a relatively low‐temperature anneal at 650 °C. The contact resistance and specific contact resistivity were dramatically improved to as low as 0.15 Ω mm and 7.8 × 10^−7^ Ω cm^2^ at 650 °C, respectively.