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Comparative study of Ti∕Al∕Mo∕Au, Mo∕Al∕Mo∕Au, and V∕Al∕Mo∕Au ohmic contacts to AlGaN∕GaN heterostructures

✍ Scribed by Selvanathan, Deepak; Mohammed, Fitih M.; Tesfayesus, Asrat; Adesida, Ilesanmi

Book ID
121774486
Publisher
AVS (American Vacuum Society)
Year
2004
Tongue
English
Weight
577 KB
Volume
22
Category
Article
ISSN
0734-211X

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📜 SIMILAR VOLUMES

Low resistance Mo/Al/Mo/Au ohmic contact
Low resistance Mo/Al/Mo/Au ohmic contact scheme to InAlN/AlN/GaN heterostructure
✍ Lee, Jaesun ;Yan, Minjun ;Ofuonye, Benedict ;Jang, Jaehyung ;Gao, X. ;Guo, Shipi 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 167 KB

## Abstract Mo/Al/Mo/Au metallization scheme was investigated to develop low‐resistance ohmic contacts on InAlN/AlN/GaN field‐effect transistor heterostructure using a pre‐metallization surface treatment with SiCl~4~ plasma in a reactive ion etching system and a relatively low‐temperature anneal at