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Low-resistance smooth-surface Ti/Al/Cr/Mo/Au n-type Ohmic contact to AlGaN/GaN heterostructures

✍ Scribed by Lan, Yung-Ling; Lin, Hung-Cheng; Liu, Hsueh-Hsing; Lee, Geng-Yen; Ren, Fan; Pearton, Stephen J.; Chang, Mao-Nan; Chyi, Jen-Inn

Book ID
118200571
Publisher
American Institute of Physics
Year
2009
Tongue
English
Weight
794 KB
Volume
94
Category
Article
ISSN
0003-6951

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📜 SIMILAR VOLUMES

Low resistance Mo/Al/Mo/Au ohmic contact
Low resistance Mo/Al/Mo/Au ohmic contact scheme to InAlN/AlN/GaN heterostructure
✍ Lee, Jaesun ;Yan, Minjun ;Ofuonye, Benedict ;Jang, Jaehyung ;Gao, X. ;Guo, Shipi 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 167 KB

## Abstract Mo/Al/Mo/Au metallization scheme was investigated to develop low‐resistance ohmic contacts on InAlN/AlN/GaN field‐effect transistor heterostructure using a pre‐metallization surface treatment with SiCl~4~ plasma in a reactive ion etching system and a relatively low‐temperature anneal at