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Low-Resistivity V/Al/Mo/Au Ohmic Contacts on AlGaN/GaN Annealed at Low Temperatures

✍ Scribed by Yafune, Norimasa; Nagamori, Motoi; Chikaoka, Hironari; Watanabe, Fuminao; Sakuno, Keiichi; Kuzuhara, Masaaki

Book ID
126948165
Publisher
Institute of Pure and Applied Physics
Year
2010
Tongue
English
Weight
328 KB
Volume
49
Category
Article
ISSN
0021-4922

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πŸ“œ SIMILAR VOLUMES

Low resistance Mo/Al/Mo/Au ohmic contact
Low resistance Mo/Al/Mo/Au ohmic contact scheme to InAlN/AlN/GaN heterostructure
✍ Lee, Jaesun ;Yan, Minjun ;Ofuonye, Benedict ;Jang, Jaehyung ;Gao, X. ;Guo, Shipi πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 167 KB

## Abstract Mo/Al/Mo/Au metallization scheme was investigated to develop low‐resistance ohmic contacts on InAlN/AlN/GaN field‐effect transistor heterostructure using a pre‐metallization surface treatment with SiCl~4~ plasma in a reactive ion etching system and a relatively low‐temperature anneal at