𝔖 Bobbio Scriptorium

✦ LIBER ✦

Au-free low temperature ohmic contacts for AlGaN/GaN power devices on 200 mm Si substrates

✍ Scribed by Firrincieli, Andrea; De Jaeger, Brice; You, Shuzhen; Wellekens, Dirk; Van Hove, Marleen; Decoutere, Stefaan

Book ID: 126295410
Publisher: Institute of Pure and Applied Physics
Year: 2014
Tongue: English
Weight: 728 KB
Volume: 53
Category: Article
ISSN: 0021-4922
DOI: 10.7567/JJAP.53.04EF01

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Low-Temperature Bonding of GaN on Si Usi

Low-Temperature Bonding of GaN on Si Using a Nonalloyed Metal Ohmic Contact Layer for GaN-Based Heterogeneous Devices

✍ Higurashi, E.; Fukunaga, T.; Suga, T. 📂 Article 📅 2012 🏛 IEEE 🌐 English ⚖ 508 KB

[IEEE 2013 IEEE Compound Semiconductor I

[IEEE 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - Monterey, CA, USA (2013.10.13-2013.10.16)] 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - Heteroepitaxial Growth and Power Devices Using AlGaN/GaN HEMT on 200 mm Si (111) Substrate

✍ Egawa, Takashi 📂 Article 📅 2013 🏛 IEEE ⚖ 368 KB

[IEEE 2013 IEEE Workshop on Wide Bandgap

[IEEE 2013 IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Columbus, OH, USA (2013.10.27-2013.10.29)] The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications - 600 V GaN HEMT on 6-inch Si substrate using Au-free Si-LSI process for power applications

✍ Kikkawa, Toshihide; Hosoda, Tsutomu; Akiyama, Shinichi; Kotani, Yoshiyuki; Wakab 📂 Article 📅 2013 🏛 IEEE ⚖ 667 KB