Low-Temperature Bonding of GaN on Si Using a Nonalloyed Metal Ohmic Contact Layer for GaN-Based Heterogeneous Devices

✍ Scribed by Higurashi, E.; Fukunaga, T.; Suga, T.

• Book ID: 114566107
• Publisher: IEEE
• Year: 2012
• Tongue: English
• Weight: 508 KB
• Volume: 48
• Category: Article
• ISSN: 0018-9197
• DOI: 10.1109/jqe.2011.2170211