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[IEEE 2013 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Japan (2013.06.5-2013.06.6)] 2013 IEEE International Meeting for Future of Electron Devices, Kansai - Formation of low ohmic contacts to AlGaN/GaN heterostructures using Ti/Al-based metal stack

✍ Scribed by Maeta, R.; Tokuda, H.; Kuzuhara, M.

Book ID: 121774385
Publisher: IEEE
Year: 2013
Weight: 536 KB
Category: Article
ISBN: 1467361062
DOI: 10.1109/IMFEDK.2013.6602238

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