𝔖 Bobbio Scriptorium

✦ LIBER ✦

[IEEE 2013 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Japan (2013.06.5-2013.06.6)] 2013 IEEE International Meeting for Future of Electron Devices, Kansai - Impact of skin effect on loss modeling of on-chip transmission-line for terahertz integrated circuits

✍ Scribed by Tsuchiya, Akira; Onodera, Hidetoshi

Book ID: 121712244
Publisher: IEEE
Year: 2013
Weight: 251 KB
Category: Article
ISBN: 1467361062
DOI: 10.1109/imfedk.2013.6602261

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE 2013 IEEE International Meeting fo

[IEEE 2013 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Japan (2013.06.5-2013.06.6)] 2013 IEEE International Meeting for Future of Electron Devices, Kansai - Atmospheric pressure processed InGaZnO thin-film transistors

✍ Furuta, Mamoru; Kawaharamura, Toshiyuki 📂 Article 📅 2013 🏛 IEEE ⚖ 221 KB

[IEEE 2013 IEEE International Meeting fo

[IEEE 2013 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Japan (2013.06.5-2013.06.6)] 2013 IEEE International Meeting for Future of Electron Devices, Kansai - A 13.56 MHz wireless power transmission systems with enhancement-mode GaN high electron mobility transistors

✍ Nakakohara, Yusuke; Kashiwagi, Junichi; Fujiwara, Tetsuya; Akutsu, Minoru; Ito, 📂 Article 📅 2013 🏛 IEEE ⚖ 356 KB

[IEEE 2013 IEEE International Meeting fo

[IEEE 2013 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Japan (2013.06.5-2013.06.6)] 2013 IEEE International Meeting for Future of Electron Devices, Kansai - Formation of low ohmic contacts to AlGaN/GaN heterostructures using Ti/Al-based metal stack

✍ Maeta, R.; Tokuda, H.; Kuzuhara, M. 📂 Article 📅 2013 🏛 IEEE ⚖ 536 KB

[IEEE 2012 IEEE International Meeting fo

[IEEE 2012 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Japan (2012.05.9-2012.05.11)] 2012 IEEE International Meeting for Future of Electron Devices, Kansai - Essence and technology direction of ADC design

✍ Matsuzawa, Akira 📂 Article 📅 2012 🏛 IEEE ⚖ 751 KB

[IEEE 2014 IEEE International Meeting fo

[IEEE 2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2014.6.19-2014.6.20)] 2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Surface charging effects on current stability of AlGaN/GaN HEMTs

✍ Nishiguchi, Kenya; Hashizume, Tamotsu 📂 Article 📅 2014 🏛 IEEE ⚖ 256 KB

[IEEE 2012 IEEE International Meeting fo

[IEEE 2012 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Japan (2012.05.9-2012.05.11)] 2012 IEEE International Meeting for Future of Electron Devices, Kansai - Graphene-based electro-optical modulator: Concept and analysis

✍ Ryzhii, V.; Satou, A.; Otsuji, T.; Yurchenko, S. O.; Ryzhii, M.; Ryabova, N.; Sh 📂 Article 📅 2012 🏛 IEEE ⚖ 132 KB