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[IEEE 2013 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Japan (2013.06.5-2013.06.6)] 2013 IEEE International Meeting for Future of Electron Devices, Kansai - Atmospheric pressure processed InGaZnO thin-film transistors

✍ Scribed by Furuta, Mamoru; Kawaharamura, Toshiyuki

Book ID: 127293541
Publisher: IEEE
Year: 2013
Weight: 221 KB
Category: Article
ISBN: 1467361062
DOI: 10.1109/imfedk.2013.6602270

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