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[IEEE 2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2014.6.19-2014.6.20)] 2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Effect of passivation films on DC characteristics of AlGaN/GaN HEMT

✍ Scribed by Ohi, S.; Kakegami, T.; Tokuda, H.; Kuzuhara, M.

Book ID: 126620337
Publisher: IEEE
Year: 2014
Weight: 238 KB
Category: Article
ISBN: 1479936146
DOI: 10.1109/IMFEDK.2014.6867065

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