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[IEEE 2013 IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Columbus, OH, USA (2013.10.27-2013.10.29)] The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications - 600 V GaN HEMT on 6-inch Si substrate using Au-free Si-LSI process for power applications

✍ Scribed by Kikkawa, Toshihide; Hosoda, Tsutomu; Akiyama, Shinichi; Kotani, Yoshiyuki; Wakabayashi, Toshihiro; Ogino, Tsutomu; Imanishi, Kenji; Mochizuki, Akitoshi; Itabashi, Kazuo; Shono, Ken; Asai, Yoshimori; Joshin, Kazukiyo; Ohki, Toshihiro; Kanamura, Masahito; Nishimori, Masato; Imada, Tadahiro; Kotani, Junji; Yamada, Atsushi; Nakamura, Norikazu; Hirose, Tatsuya; Watanabe, Keiji

Book ID: 125547770
Publisher: IEEE
Year: 2013
Weight: 667 KB
Category: Article
ISBN: 1479911941
DOI: 10.1109/WiPDA.2013.6695552

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