✦ LIBER ✦

Ti/Al/Mo/Au Ohmic contacts to all-binary AlN/GaN high electron mobility transistors

✍ Scribed by Wang, Liang; Adesida, Ilesanmi; Dabiran, Amir M.; Wowchak, Andrew M.; Chow, Peter P.

Book ID: 121774213
Publisher: American Institute of Physics
Year: 2008
Tongue: English
Weight: 605 KB
Volume: 93
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2964204

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Ohmic contacts to n[sup +]-GaN capped Al

Ohmic contacts to n[sup +]-GaN capped AlGaNâAlNâGaN high electron mobility transistors

✍ Wang, Liang; Mohammed, Fitih M.; Ofuonye, Benedict; Adesida, Ilesanmi 📂 Article 📅 2007 🏛 American Institute of Physics 🌐 English ⚖ 690 KB

Formation of Ta/Ti/Al/Mo/Au ohmic contac

Formation of Ta/Ti/Al/Mo/Au ohmic contacts to an AlGaN/AlN/GaN heterostructure grown on a silicon substrate

✍ Osipov, K. Yu.; Velikovskiy, L. E.; Kagadei, V. A. 📂 Article 📅 2014 🏛 Springer 🌐 English ⚖ 461 KB

Mo∕Al∕Mo∕Au Ohmic contact scheme for Al[

Mo∕Al∕Mo∕Au Ohmic contact scheme for Al[sub x]Ga[sub 1−x]N∕GaN high electron mobility transistors annealed at 500 °C

✍ Basu, A. ;Mohammed, F. M. ;Guo, S. ;Peres, B. ;Adesida, I. 📂 Article 📅 2006 🏛 AVS (American Vacuum Society) 🌐 English ⚖ 262 KB

Pd/Ge/Ti/Au ohmic contact to AlGaAs/InGa

Pd/Ge/Ti/Au ohmic contact to AlGaAs/InGaAs pseudomorphic high electron mobility transistor with an undoped cap layer

✍ Kim, Yi-Tae; Lee, Jong-Lam; Mun, Jae Kyoung; Kim, Haecheon 📂 Article 📅 1997 🏛 American Institute of Physics 🌐 English ⚖ 300 KB

Ti-based nonalloyed Ohmic contacts for A

Ti-based nonalloyed Ohmic contacts for Al0.15Ga0.85N/GaN high electron mobility transistors using regrown n+-GaN by plasma assisted molecular beam epitaxy

✍ Seo, Hui-Chan; Chapman, Patrick; Cho, Hyun-Ick; Lee, Jung-Hee; Kim, Kyekyoon (Ke 📂 Article 📅 2008 🏛 American Institute of Physics 🌐 English ⚖ 709 KB