We summarize here results of calculations and experiments on electron and valence hole states in a single pair of vertically stacked and electronically coupled InAs self-assembled quantum dots. In perfectly aligned quantum dots one can relate an electron-hole complex to a pair of entangled qubits. T
Localization of holes in an InAs/GaAs quantum-dot molecule
β Scribed by M. M. Sobolev; G. E. Cirlin; Yu. B. Samsonenko; N. K. Polyakov; A. A. Tonkikh; Yu. G. Musikhin
- Book ID
- 110140926
- Publisher
- Springer
- Year
- 2005
- Tongue
- English
- Weight
- 89 KB
- Volume
- 39
- Category
- Article
- ISSN
- 1063-7826
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π SIMILAR VOLUMES
Photoluminescence, capacitance-voltage and transmission electron microscopy studies have been carried out on structures containing a sheet of a self-assembled InAs quantum dots formed in GaAs matrices after the deposition of a 1.7 ML of InAs at 480 β’ C. The use of n-and p-type GaAs matrices allows u
The electron-and hole-related electrical activity of the InAs/GaAs quantum dot system has been demonstrated with a use of the highresolution Laplace and conventional DLTS methods combined with below GaAs bandgap illumination. Without the illumination, the DLTS signal refers to the emission process o