Extended optical properties beyond band-edge of GaAs by InAs quantum dots and quantum dot molecules
β Scribed by O. Tangmettajittakul; S. Thainoi; P. Changmoang; S. Kanjanachuchai; S. Rattanathammaphan; S. Panyakeow
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 323 KB
- Volume
- 87
- Category
- Article
- ISSN
- 0167-9317
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In this work we have studied the optical properties of InAs quantum dots (QDs) grown by molecular-beam epitaxy on GaAs (211)A, on (n11)A/B (where n is 1, 5 and 7), and on reference (100) substrates. Investigation of orientation and polarity effects by means of photoluminescence (PL) are also present
## Abstract We present the results of a comprehensive study carried out on morphological, structural and optical properties of InAs/GaAs quantum dot structures grown by Molecular Beam Epitaxy. InAs quantum dots were deposited at low growth rate and high growth temperature and were capped with InGaA