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Extended optical properties beyond band-edge of GaAs by InAs quantum dots and quantum dot molecules

✍ Scribed by O. Tangmettajittakul; S. Thainoi; P. Changmoang; S. Kanjanachuchai; S. Rattanathammaphan; S. Panyakeow


Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
323 KB
Volume
87
Category
Article
ISSN
0167-9317

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## Abstract We present the results of a comprehensive study carried out on morphological, structural and optical properties of InAs/GaAs quantum dot structures grown by Molecular Beam Epitaxy. InAs quantum dots were deposited at low growth rate and high growth temperature and were capped with InGaA