Optical properties of self-assembled InAs quantum dots on high-index GaAs substrates

✍ Scribed by P.P. González-Borrero; E. Marega Jr; D.I. Lubyshev; E. Petitprez; P. Basmaji

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 136 KB
• Volume: 22
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1996.0370

✦ Synopsis

In this work we have studied the optical properties of InAs quantum dots (QDs) grown by molecular-beam epitaxy on GaAs (211)A, on (n11)A/B (where n is 1, 5 and 7), and on reference (100) substrates. Investigation of orientation and polarity effects by means of photoluminescence (PL) are also presented. The PL spectra reveal interesting differences in amplitude, integral luminescence, peak position and peak shape. The PL temperature dependence indicates an additional lateral confinement on ( 100), (n11)B, (211)A and (111)A surfaces. Our results also show an enhancement of the QD onset thermal quenching energy by a factor of ∼ 3 for these orientations. In contrast, the structures grown on (711)A and (511)A surfaces do not exhibit QD formation.