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The engineering and properties of InAs quantum dot molecules in a GaAs matrix

✍ Scribed by Yu. B. Samsonenko; G. E. Cirlin; A. A. Tonkikh; N. K. Polyakov; N. V. Kryzhanovskaya; V. M. Ustinov; L. E. Vorob’ev; D. A. Firsov; V. A. Shalygin; N. D. Zakharov; P. Werner; A. Andreev

Book ID
110140927
Publisher
Springer
Year
2005
Tongue
English
Weight
108 KB
Volume
39
Category
Article
ISSN
1063-7826

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Photoluminescence, capacitance-voltage and transmission electron microscopy studies have been carried out on structures containing a sheet of a self-assembled InAs quantum dots formed in GaAs matrices after the deposition of a 1.7 ML of InAs at 480 • C. The use of n-and p-type GaAs matrices allows u