✦ LIBER ✦

Electron and hole levels of InAs quantum dots in a GaAs matrix

✍ Scribed by M. Henini; P.N. Brounkov; A. Polimeni; S.T. Stoddart; P.C. Main; L. Eaves; A.R. Kovsh; Yu.G. Musikhin; S.G. Konnikov

Publisher: Elsevier Science
Year: 1999
Tongue: English
Weight: 110 KB
Volume: 25
Category: Article
ISSN: 0749-6036
DOI: 10.1006/spmi.1998.0621

No coin nor oath required. For personal study only.

✦ Synopsis

Photoluminescence, capacitance-voltage and transmission electron microscopy studies have been carried out on structures containing a sheet of a self-assembled InAs quantum dots formed in GaAs matrices after the deposition of a 1.7 ML of InAs at 480 • C. The use of n-and p-type GaAs matrices allows us to study separately electron and hole levels in the quantum dots by the capacitance-voltage technique. From analysis of photoluminescence and capacitance-voltage measurements it follows that the quantum dots have electron levels 80 meV below the bottom of the GaAs conduction band and two heavy-hole levels at 100 meV and 170 meV above the top of the GaAs valence band.

📜 SIMILAR VOLUMES

Time-Resolved Capacitance Spectroscopy o

Time-Resolved Capacitance Spectroscopy of Hole and Electron Levels in InAs/GaAs Quantum Dots

✍ C.M.A. Kapteyn; M. Lion; R. Heitz; D. Bimberg; P. Brunkov; B. Volovik; S.G. Konn 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 82 KB 👁 2 views

a), M. Lion (a), R. Heitz (a), D. Bimberg (a), P. Brunkov (b), B. Volovik (b), S. G. Konnikov (b), A. R. Kovsh (b), and V. M. Ustinov (b)

Intersublevel Emission in InAs/GaAs Quan

Intersublevel Emission in InAs/GaAs Quantum Dots

✍ S. Sauvage; P. Boucaud; T. Brunhes; A. Lemaître; J.-M. Gérard 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 115 KB 👁 2 views

Excited States of InAs/GaAs Quantum Dots

✍ R. Heitz; F. Guffarth; I. Mukhametzhanov; O. Stier; A. Madhukar; D. Bimberg 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 107 KB 👁 2 views

Self-Assembled InAs Quantum Dots in an I

Self-Assembled InAs Quantum Dots in an InGaAsN Matrix on GaAs

✍ A.Yu. Egorov; D. Bedarev; D. Bernklau; G. Dumitras; H. Riechert 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 90 KB 👁 2 views

Stability of Biexcitons in Pyramidal InA

Stability of Biexcitons in Pyramidal InAs/GaAs Quantum Dots

✍ O. Stier; A. Schliwa; R. Heitz; M. Grundmann; D. Bimberg 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 83 KB 👁 2 views

InAs quantum dots in GaAs holes: island

InAs quantum dots in GaAs holes: island number dependence on hole diameter and conduction-band coupling estimates

✍ S. Jeppesen; M.S. Miller; B. Kowalski; I. Maximov; L. Samuelson 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 216 KB

We studied the formation of InAs islands in holes defined by electron-beam lithography on GaAs substrates. The islands grew selectively in the holes, with one to nine islands per hole. The number of islands depends simply on the hole diameter, filling the holes at a constant effective two-dimensiona