Photoluminescence, capacitance-voltage and transmission electron microscopy studies have been carried out on structures containing a sheet of a self-assembled InAs quantum dots formed in GaAs matrices after the deposition of a 1.7 ML of InAs at 480 • C. The use of n-and p-type GaAs matrices allows u
Strain-renormalized energy spectra of electrons and holes in InAs quantum dots in the InAs/GaAs heterosystem
✍ Scribed by O. O. Dan’kiv; R. M. Peleshchak
- Book ID
- 110143838
- Publisher
- SP MAIK Nauka/Interperiodica
- Year
- 2005
- Tongue
- English
- Weight
- 58 KB
- Volume
- 31
- Category
- Article
- ISSN
- 1063-7850
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