Photoluminescence, capacitance-voltage and transmission electron microscopy studies have been carried out on structures containing a sheet of a self-assembled InAs quantum dots formed in GaAs matrices after the deposition of a 1.7 ML of InAs at 480 • C. The use of n-and p-type GaAs matrices allows u
✦ LIBER ✦
Entangled states of electron–hole complex in a single InAs/GaAs coupled quantum dot molecule
✍ Scribed by M. Korkusinski; P. Hawrylak; M. Bayer; G. Ortner; A. Forchel; S. Fafard; Z. Wasilewski
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 192 KB
- Volume
- 13
- Category
- Article
- ISSN
- 1386-9477
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✦ Synopsis
We summarize here results of calculations and experiments on electron and valence hole states in a single pair of vertically stacked and electronically coupled InAs self-assembled quantum dots. In perfectly aligned quantum dots one can relate an electron-hole complex to a pair of entangled qubits. The information carried by individual qubit is related to the quantum dot index (isospin) of individual carrier. The quality of fabricated quantum dot molecules is identiÿed from the exciton ÿne structure in a magnetic ÿeld.
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