To investigate the strain characteristics of InAs quantum dots grown on (001) GaAs by solid source molecular beam epitaxy we have compared calculated transition energies with those obtained from photoluminescence measurements. Atomic force microscopy shows the typical lateral size of the quantum dot
Electronic structure and energy relaxation in strained InAs/GaAs quantum pyramids
✍ Scribed by M. Grundmann; R. Heitz; N. Ledentsov; O. Stier; D. Bimberg; V.M. Ustinov; P.S. Kop'ev; Zh.I. Alferov; S.S. Ruvimov; P. Werner; U. Gösele; J. Heydenreich
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 707 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0749-6036
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📜 SIMILAR VOLUMES
Experimental results on high electric field longitudinal transport in GaAs/AlAs and \(G a A s / G a_{1-x} A l_{x} A s\) multiple quantum wells (MQW) are presented and compared with the prediction of a dielectric continuum model. We draw from our experiments the following four conclusions. (i) In \(
Photoluminescence, capacitance-voltage and transmission electron microscopy studies have been carried out on structures containing a sheet of a self-assembled InAs quantum dots formed in GaAs matrices after the deposition of a 1.7 ML of InAs at 480 • C. The use of n-and p-type GaAs matrices allows u