Strain and optical transitions in InAs q
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Y Fu; F Ferdos; M Sadeghi; Q.X Zhao; S.M Wang; A Larsson
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Article
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2001
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Elsevier Science
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English
โ 218 KB
To investigate the strain characteristics of InAs quantum dots grown on (001) GaAs by solid source molecular beam epitaxy we have compared calculated transition energies with those obtained from photoluminescence measurements. Atomic force microscopy shows the typical lateral size of the quantum dot