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Liquid phase epitaxial growth of 3C-SiC films deposited on Si

✍ Scribed by Chen, Zhiming; Ma, Jianping; Lu, Gang; Lei, Tianmin; Yu, Mingbin; Hang, Lianmao; Feng, Xianfeng

Book ID
122153974
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
110 KB
Volume
10
Category
Article
ISSN
0925-9635

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Epitaxial growth of 3C-SiC films on Si s
Epitaxial growth of 3C-SiC films on Si substrates by triode plasma CVD using dimethylsilane
✍ Kanji Yasui; Kunio Asada; Tadashi Akahane πŸ“‚ Article πŸ“… 2000 πŸ› Elsevier Science 🌐 English βš– 231 KB

The epitaxial growth of cubic-silicon carbide SiC on Si substrates was carried out by triode plasma CVD using Ε½ . dimethylsilane DMS as source gas. The lowering of electron temperature and the reduction of the rf fluctuation of plasma space potential in the afterglow plasma region were realized by a