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MOCVD growth of cubic GaN on 3C-SiC deposited on Si (100) substrates

✍ Scribed by C. H. Wei; Z. Y. Xie; L. Y. Li; Q. M. Yu; J. H. Edgar

Book ID: 107452424
Publisher: Springer US
Year: 2000
Tongue: English
Weight: 320 KB
Volume: 29
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-000-0070-z

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