Cubic GaN/AlGaN Schottky-barrier devices on 3C-SiC substrates
โ Scribed by D.J. As; S. Potthast; J. Fernandez; K. Lischka; H. Nagasawa; M. Abe
- Book ID
- 108207526
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 128 KB
- Volume
- 83
- Category
- Article
- ISSN
- 0167-9317
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๐ SIMILAR VOLUMES
Non-polar relaxed cubic GaN was grown by molecular beam epitaxy (MBE) on nano-patterned 3C-SiC/Si (0 0 1) substrates with negligible hexagonal content and less defect density than in planar cubic GaN layers. Nano-patterning of 3C-SiC/Si (0 0 1) is achieved by self-ordered colloidal masks for the fir
## Abstract Resonant tunnelling diodes of cubic Al(Ga)N/GaN were grown by plasma assisted molecular beam epitaxy on 3CโSiC (001). We observe a pronounced negative differential resistance at about 1.2โV with a peakโtoโvalley ratio (PVR) of 1.3 to 2.7 at room temperature. Experimental data is in good
## Abstract We present our recent results on the growth of cubic AlN (001) layers by plasma assisted molecular beam epitaxy (PAMBE) using freestanding 3CโSiC (001) substrate. For highโquality cโAlN layers reflection highโelectron energy diffraction (RHEED) patterns in all azimuths show RHEED patter