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Growth of Epitaxial 3C-SiC Films on Si(100) via Low Temperature SiC Buffer Layer

✍ Scribed by Lien, Wei-Cheng; Ferralis, Nicola; Carraro, Carlo; Maboudian, Roya


Book ID
120373820
Publisher
American Chemical Society
Year
2010
Tongue
English
Weight
802 KB
Volume
10
Category
Article
ISSN
1528-7483

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Epitaxial growth of 3C-SiC films on Si s
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The epitaxial growth of cubic-silicon carbide SiC on Si substrates was carried out by triode plasma CVD using Ε½ . dimethylsilane DMS as source gas. The lowering of electron temperature and the reduction of the rf fluctuation of plasma space potential in the afterglow plasma region were realized by a