✦ LIBER ✦

Growth and characterization of epitaxial ultra-thin NbN films on 3C-SiC/Si substrate for terahertz applications

✍ Scribed by Dochev, D; Desmaris, V; Pavolotsky, A; Meledin, D; Lai, Z; Henry, A; Janzén, E; Pippel, E; Woltersdorf, J; Belitsky, V

Book ID: 119942432
Publisher: Institute of Physics
Year: 2011
Tongue: English
Weight: 713 KB
Volume: 24
Category: Article
ISSN: 0953-2048
DOI: 10.1088/0953-2048/24/3/035016

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Epitaxy of Graphene on 3C-SiC(111) Thin

Epitaxy of Graphene on 3C-SiC(111) Thin Films on Microfabricated Si(111) Substrates

✍ Ide, Takayuki; Kawai, Yusuke; Handa, Hiroyuki; Fukidome, Hirokazu; Kotsugi, Masa 📂 Article 📅 2012 🏛 Institute of Pure and Applied Physics 🌐 English ⚖ 578 KB

Epitaxial growth of 3C-SiC films on Si s

Epitaxial growth of 3C-SiC films on Si substrates by triode plasma CVD using dimethylsilane

✍ Kanji Yasui; Kunio Asada; Tadashi Akahane 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 231 KB

The epitaxial growth of cubic-silicon carbide SiC on Si substrates was carried out by triode plasma CVD using Ž . dimethylsilane DMS as source gas. The lowering of electron temperature and the reduction of the rf fluctuation of plasma space potential in the afterglow plasma region were realized by a

Preparation and Characterization of Epit

Preparation and Characterization of Epitaxial Conductive Nb-SrTiO3Thin Films on Si Substrates

✍ Chun Wang 📂 Article 📅 2009 🏛 Springer US 🌐 English ⚖ 278 KB

Growth and doping of SiC-thin films on l

Growth and doping of SiC-thin films on low-stress, amorphous Si3N4/Si substrates for robust microelectromechanical systems applications

✍ L. Cheng; M. Pan; J. Scofield; A. J. Steckl 📂 Article 📅 2002 🏛 Springer US 🌐 English ⚖ 369 KB

Growth and characterization of epitaxial

Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)

✍ K. Buchholt; P. Eklund; J. Jensen; J. Lu; R. Ghandi; M. Domeij; C.M. Zetterling; 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 571 KB

Controlled-growth and characterization o

Controlled-growth and characterization of 3C-SiC and 6H-SiC films on C-plane sapphire substrates by LPCVD

✍ Haiwu Zheng; Zhuxi Fu; Bixia Lin; Xiaoguang Li 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 815 KB