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Controlled-growth and characterization of 3C-SiC and 6H-SiC films on C-plane sapphire substrates by LPCVD

✍ Scribed by Haiwu Zheng; Zhuxi Fu; Bixia Lin; Xiaoguang Li

Book ID
116600347
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
815 KB
Volume
426
Category
Article
ISSN
0925-8388

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Effect of growth parameters on the heter
Effect of growth parameters on the heteroepitaxy of 3C-SiC on 6H-SiC substrate by chemical vapor deposition
✍ M. Soueidan; G. Ferro; B. Nsouli; F. Cauwet; J. Dazord; G. Younes; Y. Monteil πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 994 KB

Epitaxial 3C-SiC(1 1 1) films were grown on 6H-SiC(0 0 0 1) Si face on axis substrates by chemical vapor deposition under H 2 , SiH 4 and C 3 H 8 in a cold wall vertical reactor. Two temperatures were studied (1450 and 1700 β€’ C) with various C/Si ratio and deposition time. It was found that under co