𝔖 Bobbio Scriptorium
✦   LIBER   ✦

CVD growth and characterization of 3C-SiC thin films

✍ Scribed by A. Gupta; D. Paramanik; S. Varma; C. Jacob

Book ID
110644526
Publisher
Springer-Verlag
Year
2004
Tongue
English
Weight
354 KB
Volume
27
Category
Article
ISSN
0250-4707

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

CVD Growth of 3C-SiC on 4H/6H Mesas
CVD Growth of 3C-SiC on 4H/6H Mesas
✍ P. G. Neudeck; A. J. Trunek; D. J. Spry; J. A. Powell; H. Du; M. Skowronski; X.  πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 976 KB

## Abstract This article describes growth and characterization of the highest quality reproducible 3C‐SiC heteroepitaxial films ever reported. By properly nucleating 3C‐SiC growth on top of perfectly on‐axis (0001) 4H‐SiC mesa surfaces completely free of atomic scale steps and extended defects, gro

Epitaxial growth of 3C-SiC films on Si s
Epitaxial growth of 3C-SiC films on Si substrates by triode plasma CVD using dimethylsilane
✍ Kanji Yasui; Kunio Asada; Tadashi Akahane πŸ“‚ Article πŸ“… 2000 πŸ› Elsevier Science 🌐 English βš– 231 KB

The epitaxial growth of cubic-silicon carbide SiC on Si substrates was carried out by triode plasma CVD using Ε½ . dimethylsilane DMS as source gas. The lowering of electron temperature and the reduction of the rf fluctuation of plasma space potential in the afterglow plasma region were realized by a