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Laser annealing studies on ion implanted iron in silicon

โœ Scribed by Damgaard, S. ;Oron, M. ;Petersen, J. W. ;Petrikin, Yu. V. ;Weyer, G.

Publisher
John Wiley and Sons
Year
1980
Tongue
English
Weight
327 KB
Volume
59
Category
Article
ISSN
0031-8965

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Q-switched ruby laser is used to anneal nitrogen and oxygen heavily implanted < 100 > silicon wafers. The atomic concentration of nitrogen and oxygen in the implanted layer is about 4%, which is a value higher than the solid solubility of these elements in silicon. The thermal epitaxial regrowth of