pn junction formation by laser annealing of ion-implanted silicon
✍ Scribed by Lindner, M.
- Publisher
- John Wiley and Sons
- Year
- 1980
- Tongue
- English
- Weight
- 274 KB
- Volume
- 57
- Category
- Article
- ISSN
- 0031-8965
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## Abstract Boron diffusion in silicon during the formation of a shallow __p__^+^/__n__ junction has been studied. Low‐energy/high‐dose boron was implanted in germanium preamorphized silicon. Preannealing involving rapid thermal annealing for 10 s, followed by annealing involving non‐melt laser ann