𝔖 Bobbio Scriptorium
✦   LIBER   ✦

pn junction formation by laser annealing of ion-implanted silicon

✍ Scribed by Lindner, M.


Publisher
John Wiley and Sons
Year
1980
Tongue
English
Weight
274 KB
Volume
57
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Laser annealing of nitrogen and oxigen i
✍ G. Della Mea; P. Mazzoldi; G. Foti; E. Rimini 📂 Article 📅 1979 🏛 Elsevier Science ⚖ 192 KB

Q-switched ruby laser is used to anneal nitrogen and oxygen heavily implanted < 100 > silicon wafers. The atomic concentration of nitrogen and oxygen in the implanted layer is about 4%, which is a value higher than the solid solubility of these elements in silicon. The thermal epitaxial regrowth of

Boron diffusion behavior in silicon duri
✍ Aid, Siti Rahmah ;Matsumoto, Satoru ;Fuse, Genshu 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 945 KB

## Abstract Boron diffusion in silicon during the formation of a shallow __p__^+^/__n__ junction has been studied. Low‐energy/high‐dose boron was implanted in germanium preamorphized silicon. Preannealing involving rapid thermal annealing for 10 s, followed by annealing involving non‐melt laser ann