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Boron diffusion behavior in silicon during shallow p+/n junction formation by non-melt excimer laser annealing

✍ Scribed by Aid, Siti Rahmah ;Matsumoto, Satoru ;Fuse, Genshu

Publisher: John Wiley and Sons
Year: 2011
Tongue: English
Weight: 945 KB
Volume: 208
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.201026531

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✦ Synopsis

Abstract

Boron diffusion in silicon during the formation of a shallow p^+^/n junction has been studied. Low‐energy/high‐dose boron was implanted in germanium preamorphized silicon. Preannealing involving rapid thermal annealing for 10 s, followed by annealing involving non‐melt laser annealing for several nanoseconds were then performed to regrow the amorphous layer and to activate dopants. We found that this combination of processes results in anomalous diffusion of boron (despite the annealing being performed within several nanoseconds), which increases the junction depth of annealed samples.

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✍ Aid, Siti Rahmah ;Matsumoto, Satoru ;Fuse, Genshu ;Sakuragi, Susumu 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 544 KB

## Abstract The combination of Ge pre‐amorphization implantation, low‐energy boron implantation, and non‐melt laser annealing is a promising method for forming ultrashallow p^+^/n junctions in silicon. In this study, shallow p^+^/n junctions were formed by non‐melt annealing implanted samples using