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Formation of Schottky junctions in silicon by ion implantation

✍ Scribed by Bollmann, J. ;Klose, H. ;Mertens, A.


Publisher
John Wiley and Sons
Year
1986
Tongue
English
Weight
197 KB
Volume
97
Category
Article
ISSN
0031-8965

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πŸ“œ SIMILAR VOLUMES


Ion-implantation issues in the formation
✍ E. Simoen; A. Satta; A. D’Amore; T. Janssens; T. Clarysse; K. Martens; B. De Jae πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 361 KB

This paper provides an overview of the current state-of-the-art in the formation of shallow junctions in germanium by ion implantation, covering the issues of dopant activation, diffusion and defect removal. As will be shown, for the case of p + implantations, the application of rapid thermal anneal