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Laser annealing for n+/p junction formation in germanium

✍ Scribed by P. Tsouroutas; D. Tsoukalas; A. Florakis; I. Zergioti; A.A. Serafetinides; N. Cherkashin; B. Marty; A. Claverie

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
427 KB
Volume
9
Category
Article
ISSN
1369-8001

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## Abstract Boron diffusion in silicon during the formation of a shallow __p__^+^/__n__ junction has been studied. Low‐energy/high‐dose boron was implanted in germanium preamorphized silicon. Preannealing involving rapid thermal annealing for 10 s, followed by annealing involving non‐melt laser ann