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Formation of p-n junctions in gallium arsenide by laser irradiation

✍ Scribed by V. A. Pilipovich; G. D. Ivlev; Yu. F. Morgun; N. V. Nechaev; V. I. Osinskii; A. Ya. Peshko

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Positive temperature dependence of emiss

✍ V. I. Osinskii; A. Ya. Peshko 📂 Article 📅 1976 🏛 Springer US 🌐 English ⚖ 286 KB

Gallium arsenide diode lasers with obliq

✍ Ch. Deutsch 📂 Article 📅 1968 🏛 Elsevier Science 🌐 English ⚖ 764 KB

The influence of indium on the pn junct

✍ Bolkhovityanova, R. I. ;Bolkhovityanov, Yu. B. 📂 Article 📅 1976 🏛 John Wiley and Sons 🌐 English ⚖ 129 KB

Laser annealing for n+/p junction format

✍ P. Tsouroutas; D. Tsoukalas; A. Florakis; I. Zergioti; A.A. Serafetinides; N. Ch 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 427 KB

pn junction formation by laser annealin

✍ Lindner, M. 📂 Article 📅 1980 🏛 John Wiley and Sons 🌐 English ⚖ 274 KB

Effect of Hydrostatic Pressure on the Sp

✍ N. N. Sirota; G. G. Shienok 📂 Article 📅 1969 🏛 John Wiley and Sons 🌐 English ⚖ 160 KB