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The influence of indium on the pn junction formation in Sidoped LPE layers of gallium arsenide

✍ Scribed by Bolkhovityanova, R. I. ;Bolkhovityanov, Yu. B.


Publisher
John Wiley and Sons
Year
1976
Tongue
English
Weight
129 KB
Volume
37
Category
Article
ISSN
0031-8965

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