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Influence of boron on the point defect equilibrium in highly n-doped gallium arsenide single crystals

✍ Scribed by U. Kretzer; F. Börner; T. Bünger; S. Eichler

Publisher: Elsevier Science
Year: 2007
Tongue: English
Weight: 432 KB
Volume: 401-402
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2007.08.158

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