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Influence of the orientation plane on level of doping and distribution of impurities in gallium arsenide epitaxial films. (USSR): B S Lisenler et al,Ṅorg Mater, 8 (4), April 1972, 670–675 (in Russian)


Publisher
Elsevier Science
Year
1973
Tongue
English
Weight
173 KB
Volume
23
Category
Article
ISSN
0042-207X

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