✦ LIBER ✦

Kinetics of silicon epitaxy using SiH4 in a rapid thermal chemical vapor deposition reactor

✍ Scribed by Liehr, M.; Greenlief, C. M.; Kasi, S. R.; Offenberg, M.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

In-situ processing using rapid thermal c

✍ V. Murali; A. T. Wu; L. Dass; M. R. Frost; D. B. Fraser; J. Liao; J. Crowley 📂 Article 📅 1989 🏛 Springer US 🌐 English ⚖ 730 KB

Radio frequency bias power effects on si

✍ Suyean Kim; Byungwhan Kim 📂 Article 📅 2009 🏛 TechnoPress 🌐 English ⚖ 946 KB

A comparison of MOS gate structures form

✍ XiaoWei Ren; Mehmet C. Ozturk; Jimmie J. Wortman; Catherine Blat; Edward Niccoli 📂 Article 📅 1991 🏛 Springer US 🌐 English ⚖ 798 KB

The initial stages of Si thin deposits o

✍ D. Angermeier; R. Monna; S. Bourdais; A. Slaoui 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 293 KB

Silicon monolayer growth using dichloros

✍ F.G. McIntosh; P.C. Colter; S.M. Bedair 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 354 KB

Transport mechanism of deposition precur

✍ Namiko Honda; Atsushi Masuda; Hideki Matsumura 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 145 KB