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Silicon monolayer growth using dichlorosilane and hydrogen in a near atmospheric pressure chemical vapor deposition reactor

โœ Scribed by F.G. McIntosh; P.C. Colter; S.M. Bedair

Book ID
107864190
Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
354 KB
Volume
225
Category
Article
ISSN
0040-6090

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Fluorine-doped ZnO films were deposited on soda lime glass by atmospheric pressure chemical vapor deposition at temperatures from 350 to 470 ยฐC by using diethyl zinc, ethanol and hexafiuoropropene as precursors. The deposited films typically contained about 0.1 to about 1.0 at.% fluorine with conduc