Textured fluorine-doped ZnO films by atmospheric pressure chemical vapor deposition and their use in amorphous silicon solar cells
✍ Scribed by Jianhua Hu; Roy G. Gordon
- Publisher
- Elsevier Science
- Year
- 1991
- Weight
- 854 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0379-6787
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✦ Synopsis
Fluorine-doped ZnO films were deposited on soda lime glass by atmospheric pressure chemical vapor deposition at temperatures from 350 to 470 °C by using diethyl zinc, ethanol and hexafiuoropropene as precursors. The deposited films typically contained about 0.1 to about 1.0 at.% fluorine with conductivities up to 2500 12 -1 cm -1. The free electron concentrations determined from Hall coefficient measurements were up to 5 X 10 s° cm-3 and the mobilities were between 10 and 40 cm 2 V-1 s-1. The films with very low sheet resistances of 5 12K:] were found to have visible absorption of only 3% and transmittance up to 90% in the visible and reflectance of about 85% in the infrared. The film roughness was controlled by the deposition temperature and by introducing a small amount of water vapor. The rough films were used as substrates for amorphous silicon solar cells with very high quantum efficiency (up to 90%).