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In-situ processing using rapid thermal chemical vapor deposition

✍ Scribed by V. Murali; A. T. Wu; L. Dass; M. R. Frost; D. B. Fraser; J. Liao; J. Crowley


Book ID
112816038
Publisher
Springer US
Year
1989
Tongue
English
Weight
730 KB
Volume
18
Category
Article
ISSN
0361-5235

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Porous GaN nanowires synthesized using t
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Porous structured GaN nanowires were synthesized with a large scale by chemical vapor deposition of Ga/Ga 2 O 3 / B 2 O 3 /C mixture under NH 3 flow. The average diameter is 40 nm and the length is up to 1 mm. The porous GaN nanowires consist of the wurtzite single crystal grown with the [0 1 1] dir